Excelics
DATA SHEET
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VERY HIGH fmax: 100GHz
+18.5dBm TYPICAL OUTPUT POWER
11.5dB TYPICAL POWER GAIN AT 12GHz
TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED
GAIN AT 12GHz
0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 5mA PER BIN RANGE
EFA018A
Low Distortion GaAs Power FET
320
60
D
68
154
290
50
S
G
S
70 80 90
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
NF
Ga
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=12GHz
Vds=6V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=6V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
Noise Figure
f=12GHz
Vds=2V, Ids=15mA
Associated Gain
f=12GHz
Vds=2V, Ids=15mA
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=1.0mA
Igd=0.5mA
Igs=0.5mA
-10
-7
MIN
16.5
9.5
TYP
18.5*
18.5*
11.5
9.5
35
1.1
10.5
25
20
50
30
-2.0
-15
-14
185
o
MAX
UNIT
dBm
dB
%
dB
dB
80
mA
mS
-3.5
V
V
V
C/W
Thermal Resistance (Au-Sn Eutectic Attach)
*P
1dB
= 19.5dBm can be obtained with 8v/50% Idss bias. Consult factory for wafer selection.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
12V
6V
Vds
Gate-Source Voltage
-8V
-4V
Vgs
Drain Current
Idss
Idss
Ids
Forward Gate Current
4mA
0.7mA
Igsf
Input Power
17dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
740mW
625mW
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site:
www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
