MP1230A/31A/32A
ELECTRICAL CHARACTERISTICS (CONT’D)
25°C
Typ
Tmin to Tmax
Min Max
Parameter
Symbol
Min
Max
Units
Test Conditions/Comments
SWITCHING
CHARACTERISTICS
2, 3
Chip Select to Write Set-Up Time
Chip Select to Write Hold Time
Data Valid to Write Set-Up Time
Data Valid to Write Hold Time
Write Pulse Width,
t
200
10
100
90
100
0
50
70
50
ns
CS
t
ns
ns
ns
ns
CH
t
DS
t
DH
t
100
WR
NOTES:
1
Full Scale Range (FSR) is 10V.
Guaranteed but not production tested.
See timing diagram.
2
3
4
Specified values guarantee functionality. Refer to other parameters for accuracy.
Specificationsare subject to change without notice
ABSOLUTE MAXIMUM RATINGS (TA = +25°C unless otherwise noted)1, 2
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +17 V
Digital Input Voltage to GND . . . . GND –0.5 to VDD +0.5 V
Storage Temperature . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 seconds) . . . . . . +300°C
IOUT1, IOUT2 to GND . . . . . . . . . . . . . . . . GND –0.5 to +6.5 V
V
V
REF to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +25 V
RFB to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +25 V
Package Power Dissipation Rating to 75°C
CDIP, PDIP, SOIC . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1 V
(Functionality Guaranteed +0.5 V)
Derates above 75°C . . . . . . . . . . . . . . . . . . . . . 12mW/°C
NOTES:
1
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation at or above this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
2
3
Any input pin which can see a value outside the absolute maximum ratings should be protected by Schottky diode clamps
(HP5082-2835) from input pin to the supplies. All inputs have protection diodes which will protect the device from short
transients outside the supplies of less than 100mA for less than 100µs.
GND refers to AGND and DGND.
Rev. 2.00
4
EXAR [ EXAR CORPORATION ]
