4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL817-G Series
Electrical Characteristics (Ta=25°C unless specified otherwise)
Input
Parameter
Forward voltage
Symbol
Min.
Typ.*
Max.
Unit
Condition
-
-
-
1.2
-
1.4
10
V
VF
IR
IF = 20mA
Reverse current
µA
pF
VR = 4V
Input capacitance
30
250
V = 0, f = 1kHz
Cin
Output
Parameter
Symbol
ICEO
Min.
-
Typ.*
-
Max.
100
Unit
nA
Condition
Collector-Emitter dark
current
V
CE = 20V, IF = 0mA
Collector-Emitter
breakdown voltage
80
7
-
-
-
-
IC = 0.1mA
IE = 0.1mA
BVCEO
BVECO
V
V
Emitter-Collector
breakdown voltage
Transfer Characteristics (Ta=25°C unless specified otherwise)
Parameter
Symbol
Min.
Typ.*
Max.
600
160
260
400
600
200
300
0.2
Unit
Condition
EL817
50
-
EL817A
EL817B
EL817C
EL817D
EL817X
EL817Y
80
-
130
200
300
100
150
-
-
Current Transfer
ratio
CTR
%
IF = 5mA ,VCE = 5V
-
-
-
-
Collector-Emitter
saturation voltage
0.1
IF = 20mA ,IC = 1mA
VCE(sat)
RIO
V
VIO = 500Vdc,
40~60% R.H.
Isolation resistance
Floating capacitance
5×1010
-
-
-
0.6
1.0
pF
CIO
VIO = 0, f = 1MHz
VCE = 5V, IC = 2mA
RL = 100, -3dB
VCE = 2V, IC = 2mA,
RL = 100
Cut-off frequency
fc
-
80
-
kHz
Rise time
Fall time
-
-
6
8
18
18
tr
tf
µs
µs
* Typical values at Ta = 25°C
Everlight Electronics Co., Ltd.
Document No：DPC-0000011 Rev.4
3
http://www.everlight.com
July 30, 2010
Revision : 4
LifecyclePhase:
Release Date:2011-02-18 08:59:58.0
Expired Period: Forever
EVERLIGHT [ EVERLIGHT ELECTRONICS CO., LTD ]
