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EUP8202-84JIR1 参数 Datasheet PDF下载

EUP8202-84JIR1图片预览
型号: EUP8202-84JIR1
PDF下载: 下载PDF文件 查看货源
内容描述: 开关模式锂离子/聚合物电池充电器 [Switch Mode Li-Ion/Polymer Battery Charger]
分类和应用: 电池开关
文件页数/大小: 21 页 / 553 K
品牌: EUTECH [ EUTECH MICROELECTRONICS INC ]
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EUP8202-4.2/8.4  
Board Layout Suggestions  
I  
(
ESR  
)
)
When laying out the printed circuit board, the following  
considerations should be taken to ensure proper operation  
of the EUP8202.  
L
(
max  
2
V
=
=
OUT(RIPPLE)  
GATE pin rise and fall times are 20ns and 50ns  
respectively (with CGATE = 2000pF). To minimize  
radiation, the catch diode, pass transistor and the input  
bypass capacitor traces should be kept as short as  
possible. The positive side of the input capacitor should  
be close to the source of the P-channel MOSFET; it  
provides the AC current to the pass transistor. The  
connection between the catch diode and the pass  
transistor should also be kept as short as possible. The  
SENSE and BAT pins should be connected directly to the  
sense resistor (Kelvin sensing) for best charge current  
accuracy. Avoid routing the NTC PC board trace near the  
MOSFET switch to minimize coupling switching noise  
into the NTC pin.  
(0.94A)(0.1)  
= 47mV  
2
For dual cells charge,  
VIN = 5V to 20V, VBAT = 8V nominal, IBAT =3A,  
fOSC = 500kHz, IEOC=0.45A,  
100mV  
R
=
= 33m  
SENSE  
3A  
Choose the inductor for about 50% ripple current at the  
maximum VIN:  
8V  
500kHz)(0.5)(3A  
8V  
20V  
L =  
1 −  
= 6.4µH  
(
)
The compensation capacitor connected at the COMP pin  
should return to the ground pin of the IC or as close to it  
as possible. This will prevent ground noise from  
disrupting the loop stability. The ground pin also works  
as a heat sink, therefore use a generous amount of copper  
around the ground pin. This is especially important for  
high VCC and/or high gate capacitance applications.  
Selecting a standard value of 6.8µH results in a  
maximum ripple current of :  
8V  
8V  
20V  
I  
=
1 −  
= 1.441A  
L
(
500kHz)(6.8µH  
)
I  
1.441A  
2
L
ILPK = I  
+
= 3A +  
3.720A  
CHG  
2
The maximum power dissipation with VIN = 9V and VBAT  
= 8V at 50ambient temperature is:  
2
(
3A) (55m)(8V  
)
P
=
= 0.44W  
D
9V  
TJ = 50+ (0.44W)(65/W) = 78.6℃  
I  
(
ESR)  
)
L
(
max  
2
V
=
=
OUT(RIPPLE)  
1.441A
)(
0.1Ω  
( )  
= 72mV  
2
The Schottky diode D2 shown in Figure 2 conducts  
current when the pass transistor is off. In a low duty  
cycle case, the current rating should be the same or  
higher than the charge current. Also it should withstand  
reverse voltage as high as VIN.  
DS8202 Ver 1.1 Nov.2007  
19  
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