EUA4996
Operating Characteristics, T
A
=25°C, Gain=1V/V
EUA4996
Symbol
Parameter
Conditions
V
DD
=5V
V
DD
=3.6V
V
DD
=2.5V
V
DD
=5V
V
DD
=3.6V
V
DD
=2.5V
V
DD
=5V
V
DD
=3.6V
V
DD
=2.5V
P
O
=2W
f=1kHz ,R
L
=3Ω P
O
=1W
P
O
=300mW
THD+N
Total harmonic distortion
plus noise
P
O
=1.8W
f=1kHz ,R
L
=4Ω P
O
=0.7W
P
O
=300mW
P
O
=1W
f=1kHz ,R
L
=8Ω P
O
=0.5W
P
O
=200mW
K
SVR
Supply ripple rejection
ratio
Crosstalk
SNR
Vn
Signal-to-noise ratio
Output voltage noise
Common mode rejection
ratio
Input impedance
V
DD
=5V
V
DD
=3.6V
V
DD
=2.5V
V
DD
=5V
V
DD
=3.6V
V
DD
=2.5V
V
DD
=5V
V
DD
=3.6V
V
DD
=2.5V
Min
Typ
2.25
1.13
0.46
1.99
1
0.42
1.27
0.65
0.29
0.16
0.19
0.08
0.09
0.06
0.07
0.04
0.04
0.05
-86
-80
-99
106
12
8.7
-60
Max.
Unit
THD+N=1%, f=1kHz,R
L
=3Ω
P
O
Output power
THD+N=1%, f=1kHz,R
L
=4Ω
W
THD+N=1%, f=1kHz,R
L
=8Ω
%
V
DD
=3.6V,
f = 217Hz
Inputs ac-grounded
with C
i
=2µF,
f = 1kHz
V
(Ripple)
=200mVpp
V
DD
=5V, R
L
=3Ω, f=1kHz ,P
O
=1W
V
DD
=5V, P
O
=2W,R
L
=3Ω,f=1kHz,Gain=1V/V
No
V
DD
=3.6V, f=20Hz to 20kHz,
weighting
Gain=1V/V ,Inputs ac-grounded
A
with C
I
=0.22µF
weighting
V
DD
=3.6V,V
IC
=200mV
PP
f=217Hz
38
dB
dB
dB
µV
RMS
CMRR
Z
I
dB
42
kΩ
40
Start-up time from
V
DD
=3.6V, C
BYPASS
=0.1µF
23
ms
shutdown
Note: The thermal performance of the TQFN package when used with the exposed- DAP connected to a thermal plane
is sufficient for driving 4Ω or 3Ω loads.
DS4996
Ver0.1
July 2008
5
EUTECH [ EUTECH MICROELECTRONICS INC ]
