Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM10GP60
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min. typ. max.
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Tvj = 150°C,
Tvj = 150°C
Tvj = 150°C
Tvj = 150°C,
TC = 25°C
IF
=
VF
V(TO)
rT
10 A
-
-
-
-
-
0,9
-
0,95
0,8
10,5
-
V
Schleusenspannung
threshold voltage
V
Ersatzwiderstand
slope resistance
-
mΩ
mA
mΩ
Sperrstrom
reverse current
VR
=
IR
1600 V
1
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
RAA’+CC’
8
-
min. typ. max.
Transistor Wechselrichter/ Transistor Inverter
VGE = 15V, Tvj
=
25°C, IC
=
VCE sat
10 A
10 A
-
-
1,95
2,2
2,35
-
V
V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 125°C, IC
=
Gate-Schwellenspannung
gate threshold voltage
V
CE = VGE
,
Tvj = 25°C, IC
=
VGE(TO)
0,35 mA
4,5
-
5,5
0,6
6,5
-
V
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Eingangskapazität
input capacitance
Cies
ICES
nF
VGE = 0V, Tvj = 25°C, VCE
VGE = 0V, Tvj =125°C, VCE
=
=
600 V
600 V
-
-
0,5
0,8
500
-
µA
Kollektor-Emitter Reststrom
collector-emitter cut-off current
mA
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE =20V, Tvj =25°C
IGES
-
-
300
nA
IC = INenn
,
VCC
GE = ±15V, Tvj = 25°C, RG
GE = ±15V, Tvj = 125°C, RG
VCC
GE = ±15V, Tvj = 25°C, RG
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
300 V
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
V
V
td,on
82 Ohm
82 Ohm
300 V
-
-
35
35
-
-
ns
ns
I
C = INenn,
Anstiegszeit (induktive Last)
rise time (inductive load)
V
tr
82 Ohm
82 Ohm
300 V
-
-
30
35
-
-
ns
ns
VGE = ±15V, Tvj = 125°C, RG
C = INenn VCC
GE = ±15V, Tvj = 25°C, RG
GE = ±15V, Tvj = 125°C, RG
VCC
GE = ±15V, Tvj = 25°C, RG
I
,
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
V
V
td,off
82 Ohm
82 Ohm
300 V
-
-
220
230
-
-
ns
ns
I
C = INenn,
Fallzeit (induktive Last)
fall time (inductive load)
V
tf
82 Ohm
82 Ohm
300 V
-
-
18
30
-
-
ns
ns
VGE = ±15V, Tvj = 125°C, RG
C = INenn VCC
I
,
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
VGE = ±15V, Tvj = 125°C, RG
LS
Eon
Eoff
ISC
82 Ohm
75 nH
-
-
-
0,4
0,3
45
-
-
-
mWs
mWs
A
I
C = INenn
,
VCC
300 V
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
VGE = ±15V, Tvj = 125°C, RG
82 Ohm
75 nH
LS
GE ≤ 15V, RG
VCC
t
P ≤ 10µs,
V
=
82 Ohm
360 V
Kurzschlußverhalten
SC Data
Tvj≤125°C,
=
dI/dt = 600 A/µs
2(11)
DB-PIM-9.xls
EUPEC [ EUPEC GMBH ]
