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FLM1213-6F 参数 Datasheet PDF下载

FLM1213-6F图片预览
型号: FLM1213-6F
PDF下载: 下载PDF文件 查看货源
内容描述: X, Ku波段内部匹配型场效应管 [X, Ku-Band Internally Matched FET]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 4 页 / 298 K
品牌: EUDYNA [ EUDYNA DEVICES INC ]
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FLM1213-6F  
X, Ku-Band Internally Matched FET  
FEATURES  
• High Output Power: P  
= 37.5dBm (Typ.)  
1dB  
• High Gain: G  
= 7.0dB (Typ.)  
1dB  
= 27% (Typ.)  
• High PAE: η  
add  
• Low IM = -45dBc@Po = 25dBm  
3
• Broad Band: 12.7 ~ 13.2GHz  
• Impedance Matched Zin/Zout = 50Ω  
• Hermetically Sealed  
DESCRIPTION  
The FLM1213-6F is a power GaAs FET that is internally matched for  
standard communication bands to provide optimum power and gain  
in a 50 ohm system.  
Eudyna’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
15  
-5  
V
V
DS  
GS  
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
31.2  
-65 to +175  
175  
W
°C  
°C  
T
T
stg  
T
ch  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 10 volts.  
DS  
2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively with  
gate resistance of 100.  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
V
I
= 5V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
-
2800 4200  
mA  
mS  
V
DS  
DS  
DS  
DSS  
g
= 5V, I  
= 1800mA  
= 120mA  
2350  
-1.5  
-
-
m
DS  
Pinch-off Voltage  
V
= 5V, I  
DS  
-0.5  
-5  
-3.0  
p
Gate Source Breakdown Voltage  
Output Power at 1dB G.C.P.  
Power Gain at 1dB G.C.P.  
Drain Current  
V
GSO  
-
V
= -120µA  
GS  
P
36.5 37.5  
-
-
dBm  
dB  
mA  
%
1dB  
V
= 10V,  
G
6.0  
7.0  
1800  
27  
DS  
1dB  
dsr  
I
= 0.6 I  
(Typ.),  
DS  
DSS  
-
-
-
I
2100  
-
f = 12.7 ~ 13.2GHz,  
Z = Z = 50Ω  
S
η
Power-Added Efficiency  
Gain Flatness  
L
add  
-
0.6  
dB  
G
f = 13.2GHz, f = 10MHz  
2-Tone Test  
Pout = 25dBm S.C.L.  
3rd Order Intermodulation  
Distortion  
IM  
R
-42  
-
-45  
4.0  
-
dBc  
3
Thermal Resistance  
CASE STYLE: IA  
°C/W  
Channel to Case  
th  
4.5  
G.C.P.: Gain Compression Point  
Edition 1.4  
August 2004  
1