FLM1213-6F
X, Ku-Band Internally Matched FET
FEATURES
• High Output Power: P
= 37.5dBm (Typ.)
1dB
• High Gain: G
= 7.0dB (Typ.)
1dB
= 27% (Typ.)
• High PAE: η
add
• Low IM = -45dBc@Po = 25dBm
3
• Broad Band: 12.7 ~ 13.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM1213-6F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain
in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Unit
Rating
Drain-Source Voltage
Gate-Source Voltage
V
V
15
-5
V
V
DS
GS
T = 25°C
c
Total Power Dissipation
Storage Temperature
Channel Temperature
P
31.2
-65 to +175
175
W
°C
°C
T
T
stg
T
ch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed 10 volts.
DS
2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Limit
Typ.
Item
Symbol
Test Conditions
Unit
Min.
Max.
V
V
V
I
= 5V, V
= 0V
GS
Saturated Drain Current
Transconductance
I
-
-
2800 4200
mA
mS
V
DS
DS
DS
DSS
g
= 5V, I
= 1800mA
= 120mA
2350
-1.5
-
-
m
DS
Pinch-off Voltage
V
= 5V, I
DS
-0.5
-5
-3.0
p
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
V
GSO
-
V
= -120µA
GS
P
36.5 37.5
-
-
dBm
dB
mA
%
1dB
V
= 10V,
G
6.0
7.0
1800
27
DS
1dB
dsr
I
= 0.6 I
(Typ.),
DS
DSS
-
-
-
I
2100
-
f = 12.7 ~ 13.2GHz,
Z = Z = 50Ω
S
η
Power-Added Efficiency
Gain Flatness
L
add
∆
-
0.6
dB
G
f = 13.2GHz, ∆f = 10MHz
2-Tone Test
Pout = 25dBm S.C.L.
3rd Order Intermodulation
Distortion
IM
R
-42
-
-45
4.0
-
dBc
3
Thermal Resistance
CASE STYLE: IA
°C/W
Channel to Case
th
4.5
G.C.P.: Gain Compression Point
Edition 1.4
August 2004
1
EUDYNA [ EUDYNA DEVICES INC ]
