EtronTech
Etron Confidential
Features
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•
•
•
•
•
•
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Fast clock rate: 200MHz
Differential Clock CK &
CK
Bi-directional DQS
DLL enable/disable by EMRS
Fully synchronous operation
Internal pipeline architecture
Four internal banks, 8M x 16-bit for each bank
Programmable Mode and Extended Mode registers
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
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Individual byte write mask control
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DM Write Latency = 0
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Auto Refresh and Self Refresh
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8192 refresh cycles / 64ms
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Precharge & active power down
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Power supplies: V
DD &
V
DDQ
= 2.5V
±
5%
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Interface: SSTL_2 I/O Interface
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Package: 66 Pin TSOP II, 0.65mm pin pitch
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Pb and Halogen free
EM6AB160TSA
Advanced (Rev. 1.3 May / 2009)
Table 1.Ordering Information
Clock
Data Rate Package
Frequency
EM6AB160TSA-5G 200MHz 400Mbps/pin TSOPII
Part Number
TS : indicates TSOPII package
A: indicates Generation Code
G: indicates
Pb and Halogen free
32M x 16 bit DDR Synchronous DRAM (SDRAM)
Figure 1. Pin Assignment (Top View)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDDQ
LDQS
NC
VDD
NC
LDM
WE
CAS
RAS
CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
NC
VREF
VSS
UDM
CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
Overview
The EM6AB160 SDRAM is a high-speed CMOS double
data rate synchronous DRAM containing 512 Mbits. It is
internally configured as a quad 8M x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CK). Data outputs occur at
both rising edges of CK and
CK
.d Read and write accesses
to the SDRAM are burst oriented; accesses start at a selected
location and continue for a programmed number of locations
in a programmed sequence. Accesses begin with the
registration of a BankActivate command which is then followed
by a Read or Write command. The EM6AB160 provides
programmable Read or Write burst lengths of 2, 4, or 8. An
auto precharge function may be enabled to provide a self-
timed row precharge that is initiated at the end of the burst
sequence. The refresh functions, either Auto or Self Refresh
are easy to use. In addition, EM6AB160 features
programmable DLL option. By having a programmable mode
register and extended mode register, the system can choose
the most suitable modes to maximize its performance. These
devices are well suited for applications requiring high memory
bandwidth, result in a device particularly well suited to high
performance main memory and graphics applications.
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.