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EM6AB160WKE-5H 参数 Datasheet PDF下载

EM6AB160WKE-5H图片预览
型号: EM6AB160WKE-5H
PDF下载: 下载PDF文件 查看货源
内容描述: [32M x 16 bit DDR Synchronous DRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 62 页 / 560 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM6AB160  
EtronTech  
Figure 41. Bank Write Access  
tCK  
tCH tCL  
CK  
CK  
tIS  
tIH  
CKE  
tIS tIH  
WRITE  
Col n  
NOP  
NOP  
PRE  
NOP  
NOP  
NOP  
ACT  
NOP  
NOP  
COMMAND  
A0-A9  
tIS tIH  
RA  
RA  
RA  
A11,A12  
tIS tIH  
ALL BANKS  
A10  
DIS AP  
ONE BANK  
*Bank X  
tIS tIH  
Bank X  
Bank X  
BA0,BA1  
tRAS  
tRCD  
tWR  
Case 1:  
tDQSS=min  
tDSH  
tDQSH  
tDSH  
tWPST  
tDQSS  
DQS  
tWPRES  
tWPRE  
tDQSL  
DI  
n
DQ  
DM  
tDSS  
Case 2:  
tDSS  
tWPST  
tDQSH  
tDQSS=max  
tDQSS  
DQS  
tWPRES  
tDQSL  
tWPRE  
DI  
n
DQ  
DM  
DI n = Data In from column n  
Burst Length = 4 in the case shown  
3 subsequent elements of Data Out are provided in the programmed order following DI n  
DIS AP = Disable Autoprecharge  
*= Don't Care , if A10 is HIGH at this point  
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address  
NOP commands are shown for ease of illustration; other commands may be valid at these times  
Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the + 25%  
window of the corresponding positive clock edge  
Don’t Care  
Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks  
Rev.1.3  
59  
Jun. /2015  
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