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EM6AB160WKE-5H 参数 Datasheet PDF下载

EM6AB160WKE-5H图片预览
型号: EM6AB160WKE-5H
PDF下载: 下载PDF文件 查看货源
内容描述: [32M x 16 bit DDR Synchronous DRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 62 页 / 560 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM6AB160  
EtronTech  
Figure 12. Read to Write Required CAS Latencies (CL=2)  
CK  
CK  
COMMAND  
ADDRESS  
WRITE  
READ  
BST  
NOP  
NOP  
NOP  
Bank,  
Col o  
Bank,  
Col n  
tDQSS  
min  
CL=2  
DQS  
DQ  
DO  
n
DI  
o
DM  
DO n (or o)= Data Out from column n (or column o)  
Burst Length= 4 in the cases shown (applies for bursts of 8 as well; if burst length is 2, the BST  
command shown can be NOP)  
1 subsequent element of Data Out appears in the programmed order following DO n  
Data in elements are applied following DI o in the programmed order  
Don’t Care  
Rev.1.3  
28  
Jun. /2015  
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