EM6AB160
EtronTech
Table 16. Electrical Characteristics and Recommended A.C.Operating Condition
(VDD = 2.5V ± 0.2V, TA = 0~70 °C)
-4
-5
Symbol
Parameter
Unit Note
Min.
Max.
-
Min.
7.5
6
Max.
12
CL = 2
CL = 2.5
CL = 3
-
-
ns
ns
ns
tCK
tCK
Clock cycle time
tCK
-
12
4
12
5
12
Clock high level width
Clock low level width
0.45
0.45
0.55
0.55
0.45
0.45
0.55
0.55
tCH
tCL
tCLMIN or
tCHMIN
tCLMIN or
tCHMIN
Clock half period
-
-
tHP
ns
2
-
0.7
0.7
0.6
0.7
-
0.7
0.7
0.6
0.7
tHZ
tLZ
Data-out-high impedance time from CK,
Data-out-low impedance time from CK,
ns
ns
ns
ns
3
3
CK
CK
-0.7
-0.6
-0.7
-0.7
-0.6
-0.7
tDQSCK DQS-out access time from CK,
CK
tAC
Output access time from CK,
CK
DQS-DQ Skew
-
0.9
0.4
0.8
0
0.4
-
0.9
0.4
0.72
0
0.4
tDQSQ
tRPRE
tRPST
tDQSS
tWPRES
tWPRE
tWPST
tDQSH
tDQSL
tIS
ns
tCK
tCK
tCK
ns
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tCK
ns
µs
tCK
ns
ns
ns
ns
ns
tCK
tCK
Read preamble
1.1
1.1
Read postamble
0.6
0.6
CK to valid DQS-in
DQS-in setup time
1.2
1.25
-
-
4
5
DQS Write preamble
DQS write postamble
DQS in high level pulse width
DQS in low level pulse width
0.25
0.4
0.35
0.35
0.7
0.7
0.4
0.4
tHP - tQHS
55
-
0.25
0.4
0.35
0.35
0.7
0.7
0.4
0.4
tHP - tQHS
55
-
0.6
0.6
-
-
-
-
Address and Control input setup time
Address and Control input hold time
DQ & DM setup time to DQS
DQ & DM hold time to DQS
DQ/DQS output hold time from DQS
Row cycle time
-
-
6
6
-
-
tIH
-
-
tDS
-
-
tDH
-
-
tQH
-
-
tRC
Refresh row cycle time
70
-
70
-
tRFC
tRAS
tRCD
tRP
Row active time
40
70K
40
70K
Active to Read or Write delay
Row precharge time
15
-
15
-
15
-
15
-
Row active to Row active delay
Write recovery time
8
-
10
-
tRRD
tWR
12
-
15
-
Internal Write to Read Command Delay
Mode register set cycle time
Average Periodic Refresh interval
Self refresh exit to read command delay
2
-
2
-
tWTR
tMRD
tREFI
tXSRD
tXSNR
tDAL
8
-
10
-
-
7.8
-
7.8
7
200
75
-
200
75
-
Self refresh exit to non-read command delay
Auto Precharge write recovery + precharge time
DQ and DM input pulse width
-
-
tWR+tRP
1.75
2.2
-
-
tWR+tRP
1.75
2.2
-
-
-
-
-
-
tDIPW
tIPW
tQHS
tDSS
Control and Address input pulse width
Data Hold Skew Factor
0.5
-
0.5
-
DQS falling edge to CK setup time
DQS falling edge hold time from CK
0.2
0.2
0.2
0.2
-
-
tDSH
tRCD or
tRASmin
tRCD or
tRASmin
Active to Autoprecharge Delay
-
-
tRAP
ns
Rev.1.3
12
Jun. /2015
ETRON [ ETRON TECHNOLOGY, INC. ]
