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EM6AB080TSB-5G 参数 Datasheet PDF下载

EM6AB080TSB-5G图片预览
型号: EM6AB080TSB-5G
PDF下载: 下载PDF文件 查看货源
内容描述: [64M x 8 bit DDR Synchronous DRAM (SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 62 页 / 563 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM6AB080  
EtronTech  
Random Read Accesses Required CAS Latencies (CL=2.5)  
CK  
CK  
COMMAND  
ADDRESS  
READ  
READ  
READ  
READ  
NOP  
NOP  
Bank,  
Col o  
Bank,  
Col p  
Bank,  
Col q  
Bank,  
Col n  
CL=2.5  
DQS  
DQ  
DO  
n'  
DO  
o
DO  
o'  
DO  
n
DO  
p
DO  
p'  
DO n, etc. =Data Out from column n, etc.  
n', etc. =the next Data Out following DO n, etc. according to the programmed burst order  
Burst Length=2,4 or 8 in cases shown. If burst of 4 or 8, the burst is interrupted  
Reads are to active rows in any banks  
Don’t Care  
Random Read Accesses Required CAS Latencies (CL=3)  
CK  
CK  
COMMAND  
ADDRESS  
READ  
READ  
READ  
READ  
NOP  
NOP  
Bank,  
Col o  
Bank,  
Col p  
Bank,  
Col q  
Bank,  
Col n  
CL=3  
DQS  
DQ  
DO  
n'  
DO  
o
DO  
o'  
DO  
n
DO  
p
DO n, etc. =Data Out from column n, etc.  
n', etc. =the next Data Out following DO n, etc. according to the programmed burst order  
Burst Length=2,4 or 8 in cases shown. If burst of 4 or 8, the burst is interrupted  
Reads are to active rows in any banks  
Don’t Care  
Etron Confidential  
25  
Rev.1.1  
Dec. /2013  
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