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EM6AB080TSB-5G 参数 Datasheet PDF下载

EM6AB080TSB-5G图片预览
型号: EM6AB080TSB-5G
PDF下载: 下载PDF文件 查看货源
内容描述: [64M x 8 bit DDR Synchronous DRAM (SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 62 页 / 563 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM6AB080  
EtronTech  
Figure 8. Consecutive Read Bursts Required CAS Latencies (CL=2)  
CK  
CK  
COMMAND  
ADDRESS  
READ  
NOP  
READ  
NOP  
NOP  
NOP  
Bank,  
Col o  
Bank,  
Col n  
CL=2  
DQS  
DQ  
DO  
n
DO  
o
DO n (or o)=Data Out from column n (or column o)  
Burst Length=4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first)  
3 subsequent elements of Data Out appear in the programmed order following DO n  
3 (or 7) subsequent elements of Data Out appear in the programmed order following DO o  
Read commands shown must be to the same device  
Don’t Care  
Etron Confidential  
19  
Rev.1.1  
Dec. /2013  
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