EtronTech
EM6AA320
8Mx32 DDR SDRAM
D.C. Characteristics
(VDD = 2.8V ± 5%, TA = 0~70 °C)
3.3 3.6
Symbol
4
5
Parameter & Test Condition
Unit
Max
OPERATING CURRENT :
One bank; Active-Precharge;
tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs
changing once per clock cycle; Address and control
inputs changing once every two clock cycles.
IDD0
IDD1
500 460
350 310 mA
480 440 mA
OPERATING CURRENT :
One bank; Active-Read-
Precharge; BL=4; CL=4; tRCDRD=4*tCK; tRC=tRC(min);
tCK=tCK(min); lout=0mA; Address and control inputs
changing once per clock cycle
600 540
PRECHARGE POWER-DOWN STANDBY CURRENT:
All banks idle; power-down mode; tCK=tCK(min);
CKE=LOW
IDD2P 120 120
IDD2N 210 200
IDD3P 120 120
100
80 mA
IDLE STANDLY CURRENT :
CKE = HIGH;
CS#=HIGH(DESELECT); All banks idle; tCK=tCK(min);
Address and control inputs changing once per clock
cycle; VIN=VREF for DQ, DQS and DM
175 170 mA
ACTIVE POWER-DOWN STANDBY CURRENT :
bank active; power-down mode; CKE=LOW;
tCK=tCK(min)
one
100
80 mA
ACTIVE STANDBY CURRENT :
CS#=HIGH;CKE=HIGH; one bank active ;
IDD3N 300 280
IDD4R 640 610
IDD4W 550 525
260 240 mA
580 550 mA
tRC=tRC(max);tCK=tCK(min);Address and control inputs
changing once per clock cycle; DQ,DQS,and DM inputs
changing twice per clock cycle
OPERATING CURRENT BURST READ :
BL=2; READS;
Continuous burst; one bank active; Address and control
inputs changing once per clock cycle; tCK=tCK(min);
lout=0mA;50% of data changing on every transfer
OPERATING CURRENT BURST Write :
BL=2;
WRITES; Continuous Burst ;one bank active; address
and control inputs changing once per clock cycle;
tCK=tCK(min); DQ,DQS,and DM changing twice per clock
cycle; 50% of data changing on every transfer
500 480 mA
650 610 mA
AUTO REFRESH CURRENT :
t
RC=tRFC(min);
IDD5
IDD6
750 720
tCK=tCK(min)
SELF REFRESH CURRENT:
Sell Refresh Mode ;
8
8
5
5 mA
CKE<=0.2V;tCK=tCK(min)
BURST OPERATING CURRENT 4 bank operation:
Four bank interleaving READs; BL=4;with Auto
Precharge; tRC=tRC(min); tCK=tCK(min); Address and
control inputschang only during Active, READ , or WRITE
command
IDD7 1100 1050 1000 950 mA
Note:
1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device.
2. All voltages are referenced to VSS.
3. Power-up sequence is described in previous page.
10
Rev 0.6
May 2006
ETRON [ ETRON TECHNOLOGY, INC. ]
