EtronTech
EM6AA160
Figure 23. Write to Read Max tDQSS, ODD Number of Data, Interrupting
T4
T8
T9
T10
T11
T12
T0
T1
T2
T3
T5
T6
T7
CK
CK
WRITE
READ
NOP
NOP
NOP
NOP
COMMAND
ADDRESS
tWTR
Bank
Col o
Bank
Col n
CL=3
tDQSS (max)
DQS
DQ
DI
n
DM
DI n = Data In for column n
An interrupted burst of 8 is shown, 1 data elements are written
tWTR is referenced from the first positive CK edge after the last Data In Pair (not the last desired
Data In element)
A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled)
The READ and WRITE commands are to the same devices but not necessarily to the same bank
DM= LDM & UDM
Don’t Care
Etron Confidential
44
Rev. 1.3
Mar. /2014
ETRON [ ETRON TECHNOLOGY, INC. ]
