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EM6A9160TSA 参数 Datasheet PDF下载

EM6A9160TSA图片预览
型号: EM6A9160TSA
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ×16的DDR同步DRAM (SDRAM)的 [8M x 16 DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 51 页 / 438 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM6A9160TSA  
EtronTech  
Table 15. D.C. Characteristics  
(VDD = 2.5V ± 5%, TA = 0~70 °C)  
-4  
Parameter & Test Condition  
Symbol  
Unit  
Max.  
OPERATING CURRENT: One bank; Active-Precharge; tRC=tRC (min);  
tCK=tCK(min); DQ,DM and DQS inputs changing once per clock cycle;  
Address and control inputs changing once every two clock cycles.  
IDD0  
130  
mA  
OPERATING CURRENT : One bank; Active-Read-Precharge; BL=4;  
tRC=tRC(min); tCK=tCK(min); lout=0mA; Address and control inputs changing IDD1  
once per clock cycle  
150  
15  
mA  
mA  
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle;  
IDD2P  
power-down mode; tCK=tCK(min); CKE=LOW  
IDLE STANDLY CURRENT : CKE = HIGH;  
banks idle; tCK=tCK(min); Address and control inputs changing once per  
clock cycle; VIN=VREF for DQ, DQS and DM  
=HIGH(DESELECT); All  
CS  
IDD2N  
IDD3P  
IDD3N  
50  
40  
90  
mA  
mA  
mA  
ACTIVE POWER-DOWN STANDBY CURRENT : one bank active; power-  
down mode; CKE=LOW; tCK=tCK(min)  
ACTIVE STANDBY CURRENT :  
=HIGH;CKE=HIGH; one bank active ;  
CS  
tRC=tRC(max);tCK=tCK(min);Address and control inputs changing once per  
clock cycle; DQ,DQS,and DM inputs changing twice per clock cycle  
OPERATING CURRENT BURST READ : BL=2; READS; Continuous burst;  
one bank active; Address and control inputs changing once per clock cycle; IDD4R  
CK=tCK(min); lout=0mA;50% of data changing on every transfer  
190  
190  
mA  
mA  
t
OPERATING CURRENT BURST Write : BL=2; WRITES; Continuous  
Burst ;one bank active; address and control inputs changing once per clock  
cycle; tCK=tCK(min); DQ,DQS,and DM changing twice per clock cycle; 50%  
of data changing on every transfer  
IDD4W  
AUTO REFRESH CURRENT : tRC=tRFC(min); tCK=tCK(min)  
IDD5  
210  
6
mA  
mA  
SELF REFRESH CURRENT: Self Refresh Mode ; CKE 0.2V;tCK=tCK(min) IDD6  
BURST OPERATING CURRENT 4 bank operation:  
Four bank interleaving READs; BL=4;with Auto Precharge; tRC=tRC(min);  
IDD7  
310  
mA  
tCK=tCK(min); Address and control inputschang only during Active, READ ,  
or WRITE command  
Etron Confidential  
11  
Rev. 1.1  
Aug. 2009