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EM6A9325BG-8G 参数 Datasheet PDF下载

EM6A9325BG-8G图片预览
型号: EM6A9325BG-8G
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×32低功耗SDRAM ( LPSDRAM ) [4M x 32 Low Power SDRAM (LPSDRAM)]
分类和应用: 动态存储器
文件页数/大小: 51 页 / 598 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
Overview
4M x 32 LPSDRAM
EM6A9325
The EM6A9325 Hand-held LPSDRAM is a 128M bits high-speed CMOS
synchronous DRAM with low power
consumption organized as 1,048,576 words by 32 bits by 4 banks. The Hand-held functions are new features of the size
of the memory array and the refresh period during Self-Refresh to be programmable by which the self refresh current is
drastically reduced.
High data transfer rate is achieved by the pipeline architecture with a synchronous interface, burst oriented Read and
write accesse, muti banks operation and programmable burst lengths. The EM6A9325 provides Read or Write burst
lengths of 1, 2, 4, 8, or full page, with a burst termination option. Through the programming burst type, burst length, CAS
latency, and driving strength in mode register and extended mode register, a variety with high performance is fulfilled and
useful in a variety of wide bandwidth, high performance and low power application.
Block Diagram
Column
Row Decoder
Decoder
4096 X 256 X 32
CELL ARRAY
(BANK #0)
Sense
Amplifier
CL K
CLO CK
BUFFER
CO N T R OL
S IG N A L
GE N ER A T OR
Sense
Row Decoder
CKE
CS #
RA S#
CA S#
WE#
Amplifier
CO M M A ND
DECODER
MODE
R E G IS T E R
4096X 256 X 32
CELL ARRAY
(BANK #1)
Column
Decoder
CO LU MN
COUN TER
A 1 0 /A P
Column
Row Decoder
Decoder
A0
A9
A10
A11
BA0
BA1
ADDRESS
BUFFER
4096 X 256 X 32
CELL ARRAY
(BANK #2)
Sense
Amplifier
REFRESH
COUN TER
Sense
DQ
BUFFER
DQ 0
D Q31
Row Decoder
Amplifier
4096 X 256 X 32
CELL ARRAY
(BANK #3)
Column
Decoder
Preliminary
D Q M 0 ~3
2
Rev 0.4
June 2003