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EM6A9320BIB-4H 参数 Datasheet PDF下载

EM6A9320BIB-4H图片预览
型号: EM6A9320BIB-4H
PDF下载: 下载PDF文件 查看货源
内容描述: [4M x 32 bit DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 61 页 / 500 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM6A9320BIB  
EtronTech  
Table 17. D.C. Characteristics  
(VDD=2.5V ± 0.2V, TA =0~70°C)  
-4  
-5  
Parameter & Test Condition  
Symbol  
Unit  
Max.  
OPERATING CURRENT: One bank; Active-Precharge; tRC=tRC (min);  
tCK=tCK (min); DQ, DM and DQS inputs changing once per clock cycle;  
Address and control inputs changing once every two clock cycles.  
IDD0  
220  
210  
mA  
OPERATING CURRENT : One bank; Active-Read-Precharge; BL=4;  
tRC=tRC(min); tCK=tCK(min); lout=0mA; Address and control inputs  
changing once per clock cycle  
IDD1  
260  
75  
240  
75  
mA  
mA  
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle;  
power-down mode; tCK=tCK(min); CKE=LOW  
IDD2P  
IDLE STANDBY CURRENT : CKE = HIGH;  
banks idle; tCK=tCK(min); Address and control inputs changing once per  
clock cycle; VIN=VREF for DQ, DQS and DM  
=HIGH(DESELECT); All  
CS  
IDD2N  
IDD3P  
IDD3N  
100  
75  
100  
75  
mA  
mA  
mA  
ACTIVE POWER-DOWN STANDBY CURRENT : one bank active; power-  
down mode; CKE=LOW; tCK=tCK(min)  
ACTIVE STANDBY CURRENT :  
=HIGH;CKE=HIGH; one bank active ;  
CS  
230  
220  
tRC=tRC(max);tCK=tCK(min);Address and control inputs changing once per  
clock cycle; DQ,DQS,and DM inputs changing twice per clock cycle  
OPERATING CURRENT BURST READ : BL=2; READs; Continuous  
burst; one bank active; Address and control inputs changing once per clock IDD4R  
cycle; tCK=tCK(min); lout=0mA;50% of data changing on every transfer  
440  
440  
420  
420  
mA  
mA  
OPERATING CURRENT BURST Write : BL=2; WRITES; Continuous  
Burst ;one bank active; address and control inputs changing once per clock  
cycle; tCK=tCK(min); DQ,DQS,and DM changing twice per clock cycle; 50%  
IDD4W  
of data changing on every transfer  
AUTO REFRESH CURRENT : tRC=tRFC(min); tCK=tCK(min)  
IDD5  
IDD6  
330  
6
300  
6
mA  
mA  
SELF REFRESH CURRENT: Self Refresh Mode ;  
CKE 0.2V;tCK=tCK(min)  
BURST OPERATING CURRENT 4 bank operation:  
Four bank interleaving READs; BL=4;with Auto Precharge; tRC=tRC(min);  
tCK=tCK(min); Address and control inputs change only during Active,  
READ , or WRITE command  
IDD7  
600  
570  
mA  
Note:  
1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent  
damage of the device.  
2. All voltages are referenced to VSS.  
3. These parameters depend on the cycle rate and these values are measured by the cycle rate  
under the minimum value of tCK and tRC. Input signals are changed one time during tCK.  
4. Power-up sequence is described in later page.  
Etron Confidential  
11  
Rev. 1.2  
Aug. /2013