EtronTech
Absolute Maximum Rating
EM6A9320BI
4Mx32 DDR SDRAM
Symbol
Item
Rating
Unit
Leaded
Pb-Free
VIN, VOUT
VDD, VDDQ
TA
Input, Output Voltage
Power Supply Voltage
Ambient Temperature
Storage Temperature
- 0.3 ~ VDDQ+0.3
V
V
-0.3 ~ 3.6
0~70
C
C
C
°
°
°
TSTG
- 55~150
TSOLDER
PD
IOUT
Soldering Temperature (10s)
Power Dissipation
Short Circuit Output Current
240
260
2.0
50
W
mA
Note : Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage of the device.
Recommended D.C. Operating Conditions (SSTL_2 In/Out, TA = 0 ~ 70 C)
°
Symbol
Parameter
Min.
Typ.
Max.
Unit
Note
VDD Power Supply Voltage
2.375
2.5
2.625
V
VDDQ Power Supply Voltage(for I/O )
VREF Input Reference Voltage
2.375
2.5
-
2.625
V
0.49 x VDDQ
VREF – 0.04 VREF VREF + 0.04
0.51 x VDDQ
V
V
VTT
Termination Voltage
VIH(DC) Input High Voltage
VIL(DC) Input Low Voltage
VOH Output High Voltage
VOL Output Low Voltage
VREF + 0.15
Vssq - 0.3
-
-
-
-
-
-
VDDQ + 0.3
VREF- 0.15
V
V
Vtt + 0.76
-
V
IOH = -15.2 mA
IOL = +15.2 mA
-
Vtt- 0.76
V
IIL
Input Leakage Current
Output Leakage Current
- 5
- 5
5
5
uA
uA
IOL
Note : Under all conditions VDDQ must be less than or equal to VDD.
Capacitance (VDD = 2.5V, f = 1MHz, TA = 25 C)
°
Parameter
Symbol
Min.
Max.
Unit
Input Capacitance (A0~A11, BA0, BA1)
Input Capacitance (CK, CK#, CKE, CS#, RAS#, CAS#, WE#)
DQ & DQS input/output capacitance
CIN1
CIN2
COUT
CIN3
4
3
6
6
5
5
8
8
pF
pF
pF
pF
DM0~DM3 input/output capacitance
Note: These parameters are periodically sampled and are not 100% tested.
9
Rev 0.9C
May 2006
ETRON [ ETRON TECHNOLOGY, INC. ]
