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EM6A9160TS-4G 参数 Datasheet PDF下载

EM6A9160TS-4G图片预览
型号: EM6A9160TS-4G
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ×16的DDR同步DRAM (SDRAM)的 [8M x 16 DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 29 页 / 275 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM6A9160  
8Mx16 DDR SDRAM  
Recommended D.C. Operating Conditions (VDD = 2.5V ± 5%, Ta = 0~70 °C)  
3.3 3.6  
4
5
Parameter & Test Condition  
OPERATING CURRENT :  
Symbol  
Unit Notes  
Max  
One bank; Active-Precharge;  
tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs  
changing once per clock cycle; Address and control  
inputs changing once every two clock cycles.  
IDD0 200 180 160 140 mA  
OPERATING CURRENT :  
One bank; Active-Read-  
Precharge; BL=4; CL=4; tRCDRD=4*tCK; tRC=tRC(min);  
tCK=tCK(min); lout=0mA; Address and control inputs  
changing once per clock cycle  
PRECHARGE POWER-DOWN STANDBY CURRENT:  
All banks idle; power-down mode; tCK=tCK(min);  
CKE=LOW  
IDD1 220 200 180 160 mA  
IDD2P 50 45 40 35 mA  
IDD2N 110 100 90 80 mA  
IDD3P 50 45 40 35 mA  
IDLE STANDLY CURRENT :  
CKE = HIGH;  
CS#=HIGH(DESELECT); All banks idle; tCK=tCK(min);  
Address and control inputs changing once per clock  
cycle; VIN=VREF for DQ, DQS and DM  
ACTIVE POWER-DOWN STANDBY CURRENT :  
bank active; power-down mode; CKE=LOW;  
tCK=tCK(min)  
one  
ACTIVE STANDBY CURRENT :  
CS#=HIGH;CKE=HIGH; one bank active ;  
IDD3N 120 110 100 90 mA  
IDD4R 340 310 280 250 mA  
tRC=tRC(max);tCK=tCK(min);Address and control inputs  
changing once per clock cycle; DQ,DQS,and DM inputs  
changing twice per clock cycle  
OPERATING CURRENT BURST READ :  
BL=2; READS;  
Continuous burst; one bank active; Address and control  
inputs changing once per clock cycle; tCK=tCK(min);  
lout=0mA;50% of data changing on every transfer  
OPERATING CURRENT BURST Write :  
BL=2;  
WRITES; Continuous Burst ;one bank active; address  
and control inputs changing once per clock cycle;  
tCK=tCK(min); DQ,DQS,and DM changing twice per clock  
cycle; 50% of data changing on every transfer  
IDD4W 280 260 240 220 mA  
IDD5 270 250 230 210 mA  
AUTO REFRESH CURRENT :  
t
RC=tRFC(min);  
tCK=tCK(min)  
SELF REFRESH CURRENT:  
CKE<=0.2V;tCK=tCK(min)  
Sell Refresh Mode ;  
IDD6  
2
2
2
2
mA  
BURST OPERATING CURRENT 4 bank operation:  
Four bank interleaving READs; BL=4;with Auto  
Precharge; tRC=tRC(min); tCK=tCK(min); Address and  
control inputschang only during Active, READ , or WRITE  
command  
IDD7 440 400 360 330 mA  
12  
Rev. 1.4  
May 2006