EtronTech
EM6A9160
8Mx16 DDR SDRAM
Recommended D.C. Operating Conditions (VDD = 2.5V ± 5%, Ta = 0~70 °C)
3.3 3.6
4
5
Parameter & Test Condition
OPERATING CURRENT :
Symbol
Unit Notes
Max
One bank; Active-Precharge;
tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs
changing once per clock cycle; Address and control
inputs changing once every two clock cycles.
IDD0 200 180 160 140 mA
OPERATING CURRENT :
One bank; Active-Read-
Precharge; BL=4; CL=4; tRCDRD=4*tCK; tRC=tRC(min);
tCK=tCK(min); lout=0mA; Address and control inputs
changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT:
All banks idle; power-down mode; tCK=tCK(min);
CKE=LOW
IDD1 220 200 180 160 mA
IDD2P 50 45 40 35 mA
IDD2N 110 100 90 80 mA
IDD3P 50 45 40 35 mA
IDLE STANDLY CURRENT :
CKE = HIGH;
CS#=HIGH(DESELECT); All banks idle; tCK=tCK(min);
Address and control inputs changing once per clock
cycle; VIN=VREF for DQ, DQS and DM
ACTIVE POWER-DOWN STANDBY CURRENT :
bank active; power-down mode; CKE=LOW;
tCK=tCK(min)
one
ACTIVE STANDBY CURRENT :
CS#=HIGH;CKE=HIGH; one bank active ;
IDD3N 120 110 100 90 mA
IDD4R 340 310 280 250 mA
tRC=tRC(max);tCK=tCK(min);Address and control inputs
changing once per clock cycle; DQ,DQS,and DM inputs
changing twice per clock cycle
OPERATING CURRENT BURST READ :
BL=2; READS;
Continuous burst; one bank active; Address and control
inputs changing once per clock cycle; tCK=tCK(min);
lout=0mA;50% of data changing on every transfer
OPERATING CURRENT BURST Write :
BL=2;
WRITES; Continuous Burst ;one bank active; address
and control inputs changing once per clock cycle;
tCK=tCK(min); DQ,DQS,and DM changing twice per clock
cycle; 50% of data changing on every transfer
IDD4W 280 260 240 220 mA
IDD5 270 250 230 210 mA
AUTO REFRESH CURRENT :
t
RC=tRFC(min);
tCK=tCK(min)
SELF REFRESH CURRENT:
CKE<=0.2V;tCK=tCK(min)
Sell Refresh Mode ;
IDD6
2
2
2
2
mA
BURST OPERATING CURRENT 4 bank operation:
Four bank interleaving READs; BL=4;with Auto
Precharge; tRC=tRC(min); tCK=tCK(min); Address and
control inputschang only during Active, READ , or WRITE
command
IDD7 440 400 360 330 mA
12
Rev. 1.4
May 2006