欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM6A9160TS-3.3G 参数 Datasheet PDF下载

EM6A9160TS-3.3G图片预览
型号: EM6A9160TS-3.3G
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ×16的DDR同步DRAM (SDRAM)的 [8M x 16 DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 29 页 / 275 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
 浏览型号EM6A9160TS-3.3G的Datasheet PDF文件第2页浏览型号EM6A9160TS-3.3G的Datasheet PDF文件第3页浏览型号EM6A9160TS-3.3G的Datasheet PDF文件第4页浏览型号EM6A9160TS-3.3G的Datasheet PDF文件第5页浏览型号EM6A9160TS-3.3G的Datasheet PDF文件第7页浏览型号EM6A9160TS-3.3G的Datasheet PDF文件第8页浏览型号EM6A9160TS-3.3G的Datasheet PDF文件第9页浏览型号EM6A9160TS-3.3G的Datasheet PDF文件第10页  
EtronTech
Operation Mode
8Mx16 DDR SDRAM
EM6A9160
Fully synchronous operations are performed to latch the commands at the positive edges of CK. Table 2
shows the truth table for the operation commands.
Table 2. Truth Table (Note (1), (2) )
Command
BankActivate
BankPrecharge
PrechargeAll
Write
Write and AutoPrecharge
Read
Read and Autoprecharge
Mode Register Set
Extended MRS
No-Operation
Burst Stop
Device Deselect
AutoRefresh
SelfRefresh Entry
SelfRefresh Exit
State
Idle
(3)
Any
Any
Active
(3)
Active
(3)
Active
(3)
Active
(3)
Idle
Idle
Any
Active
(4)
Any
Idle
Idle
Idle
(SelfRefresh)
CKE
n-1
CKE
n
UDM UDM BS
0,1
A
10
A
0-9,11
/CS /RAS /CAS /WE
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
H
L
H
L
H
X
X
X
X
X
X
X
X
X
X
X
X
H
L
H
L
H
L
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
X
X
X
X
X
V
V
X
V
V
V
V
Row address
L
H
L
H
L
H
X
X
Column
address
(A0 ~ A8)
Column
address
(A0 ~ A8)
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
L
L
H
H
X
L
L
X
H
X
H
X
H
X
V
X
H
X
X
H
H
H
L
L
L
L
L
L
H
H
X
L
L
X
H
X
H
X
H
X
V
X
H
X
X
H
L
L
L
L
H
H
L
L
H
L
X
H
H
X
H
X
H
X
H
X
V
X
H
X
X
OP code
OP code
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
H
L
L
H
L
H
L
H
L
H
L
H
L
X
Precharge Power Down Mode
Entry
Precharge Power Down Mode
Exit
Active Power Down Mode
Entry
Active Power Down Mode Exit
Idle
Any
(PowerDown)
Active
Any
(PowerDown)
Data Input Mask Disable
Data Input Mask Enable(5)
Active
Active
H
X
H
H
X
X
X
X
Note:
1. V=Valid data, X=Don't Care, L=Low level, H=High level
2. CKE
n
signal is input level when commands are provided.
CKE
n-1
signal is input level one clock cycle before the commands are provided.
3. These are states of bank designated by BS signal.
4. Device state is 1, 2, 4, 8, and full page burst operation.
5. LDM and UDM can be enable respectively.
6
Rev. 1.4
May 2006