EM68B32DVKA
EtronTech
z Extended Mode Register Set (EMRS )
The Extended Mode Register is designed to support Partial Array Self Refresh and Driver Strength. The
EMRS cycle is not mandatory, and the EMRS command needs to be issued only when either PASR or DS
is used. The Extended Mode Register is written by asserting Low on
,
,
,
, and BA0 and
CS RAS CAS WE
High on BA1 (the device should have all banks idle with no bursts in progress prior to writing into the
Extended Mode Register, and CKE should be High). Values stored in the register will be retained until the
register is reprogrammed, the device enters Deep Power Down mode, or power is removed from the device.
The state of address pins A0~A12 and BA0, BA1 in the same cycle in which
,
,
and
are
WE
CS RAS CAS
asserted Low is written into the Extended Mode Register. Two clock cycles, tMRD, are required to complete
the write operation in the Extended Mode Register. A0~A2 are used for Partial Array Self Refresh and
A5~A6 are used for Driver Strength. An automatic Temperature Compensated Self Refresh function is
included with a temperature sensor embedded into this device. A3~A4 are no longer used to control this
function; any inputs applied to A3~A4 during EMRS are ignored. All the other address pins, A7~A12 and
BA0, must be set to Low for proper EMRS operation. Refer to the tables below for specific codes. If the user
does not write values to the Extended Mode Register, DS defaults to Full Strength; and PASR defaults to
the Full Array.
Table 6. Extend Mode Register Bitmap
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Field
1
0
0
0
0
0
DS
0
0
PASR
Mode Register
A6 A5 Drive Strength
A2 A1 A0 Partial Array Self Refresh Coverage
0
0
1
1
0
1
0
1
Full Strength
1/2 Strength
1/4 Strength
1/8 Strength
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Full Array (All Banks)
Half of Full Array (BA1=0)
Quarter of Full Array (BA1=BA0=0)
Reserved
Reserved
Reserved
Reserved
Reserved
TEMPERATURE COMPENSATED SELF REFRESH
In order to reduce power consumption, a Mobile DDR SDRAM includes the internal temperature sensor
and other circuitry to control Self Refresh operation automatically according to two temperature ranges: max.
40°C and max. 85°C
Table 7. IDD6 Specifications and Conditions
Self Refresh Current (IDD6
)
Temperature Range
Full Array
490
1/2 of Full Array
1/4 of Full Array
Unit
µA
350
460
280
340
Max. 40°C
Max. 85°C
700
µA
PARTIAL ARRAY SELF REFRESH
For further power savings during Self Refresh, the PASR feature allows the controller to select the amount
of memory that will be refreshed during Self Refresh. The refresh options are all banks (banks 0, 1, 2 and 3);
two banks (bank 0 and 1); and one bank (bank 0). Write and Read commands can still affect any bank
during standard operations, but only the selected banks will be refreshed during Self Refresh. Data in
unselected banks will be lost.
Etron Confidential
9
Rev. 1.0
Mar. 2009
ETRON [ ETRON TECHNOLOGY, INC. ]
