EM68B16DVAA
EtronTech
Figure 27. Random Write Cycles
CK
CK
WRITE
WRITE
WRITE
WRITE
WRITE
NOP
Command
Address
BA, Col b
BA, Col x
BA, Col n
BA, Col a
BA, Col g
tDQSS max
DQS
DQ
DI b
DI b
DI x
DI x
DI n
DI n
DI a
DI a
DM
Don’t Care
(1) DI b etc. = Data In to column b, etc. ;
b’, etc. = the next Data In following DI b, etc. according to the programmed burst order
(2) Programmed burst length = 2, 4, 8 or 16 in cases shown. If burst of 4, 8 or 16, burst would be truncated.
(3) Each WRITE command may be to any active bank and may be to the same or different devices.
Figure 28. Non-Interrupting Write to Read
CK
CK
WRITE
NOP
NOP
NOP
READ
NOP
NOP
Command
Address
BA, Col b
BA, Col n
tWR
CL = 3
tDQSS max
DQS
DQ
DI b
DM
Don’t Care
(1) DI b = Data In to column b.
3 subsequent elements of Data In are applied in the programmed order following DI b.
(2) A non-interrupted burst of 4 is shown.
(3) tWTR is referenced from the positive clock edge after the last Data In pair.
(4) A10 is LOW with the WRITE command (Auto Precharge is disabled)
(5) The READ and WRITE commands are to the same device but not necessarily to the same bank.
Etron Confidential
34
Rev. 1.0
Mar. 2009
ETRON [ ETRON TECHNOLOGY, INC. ]
