欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM68932DVKB-6H 参数 Datasheet PDF下载

EM68932DVKB-6H图片预览
型号: EM68932DVKB-6H
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×32的移动DDR同步DRAM (SDRAM)的 [4M x 32 Mobile DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 40 页 / 342 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
 浏览型号EM68932DVKB-6H的Datasheet PDF文件第22页浏览型号EM68932DVKB-6H的Datasheet PDF文件第23页浏览型号EM68932DVKB-6H的Datasheet PDF文件第24页浏览型号EM68932DVKB-6H的Datasheet PDF文件第25页浏览型号EM68932DVKB-6H的Datasheet PDF文件第27页浏览型号EM68932DVKB-6H的Datasheet PDF文件第28页浏览型号EM68932DVKB-6H的Datasheet PDF文件第29页浏览型号EM68932DVKB-6H的Datasheet PDF文件第30页  
EM68932DVKB  
EtronTech  
Figure 16. Non-Consecutive Read Bursts  
CK  
CK  
READ  
NOP  
NOP  
READ  
NOP  
NOP  
Command  
Address  
BA, Col n  
BA, Col b  
CL = 2  
CL = 3  
DQS  
DQ  
DO n  
DO b  
DQS  
DQ  
DO n  
Don’t Care  
(1) DO n (or b) = Data Out from column n (or column b)  
(2) BA Col n (b) = Bank A, Column n (b)  
(3) Burst Length = 4; 3 subsequent elements of Data Out appear in the programmed order following DO n (b)  
(4) Shown with nominal tAC, tDQSCK and tDQSQ  
Figure 17. Random Read Bursts  
CK  
CK  
READ  
READ  
READ  
READ  
NOP  
NOP  
Command  
Address  
BA, Col n  
BA, Col x  
BA, Col b  
BA, Col g  
CL = 2  
DQS  
DQ  
DO n  
DO n’  
DO x  
DO x’  
DO b  
DO b’  
DO g  
DO g’  
CL = 3  
DQS  
DQ  
DO n  
DO n’  
DO x  
DO x’  
DO b  
DO b’  
Don’t Care  
(1) DO n, etc. = Data Out from column n, etc.  
n’, x’, etc. = Data Out elements, according to the programmed burst order  
(2) BA, Col n = Bank A, Column n  
(3) Burst Length = 2, 4 or 8 in cases shown (if burst of 4 or 8 , the burst is interrupted)  
(4) Reads are to active rows in any banks  
Etron Confidential  
26  
Rev. 1.0  
Aug. 2009  
 复制成功!