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EM68916DVAA 参数 Datasheet PDF下载

EM68916DVAA图片预览
型号: EM68916DVAA
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ×16的移动DDR同步DRAM ( SDRAM ) [8M x 16 Mobile DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 40 页 / 322 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
LDM, UDM
Input
EM68916DVAA
Data Input Mask:
DM is an input mask signal for write data. Input data is masked
when DM is sampled High along with input data during a Write access. DM is
sampled on both edges of DQS. DM pins include dummy parasitic loading
internally to match the DQ and DQS loading. For x16, LDM is DM for DQ0-DQ7
and UDM is DM for DQ8-DQ15.
Data I/O:
The DQ0-DQ15 input and output data are synchronized with the positive
edges of CK and
CK
. The I/Os are byte-maskable during Writes.
Power Supply:
+1.8V+0.15V/-0.1V
Ground
DQ Power:
+1.8V+0.15V/-0.1V. Provide isolated power to DQs for improved noise
immunity.
DQ Ground:
Provide isolated ground to DQs for improved noise immunity.
No Connect:
No internal connection, these pins suggest to be left unconnected.
DQ0 – DQ15
V
DD
V
SS
V
DDQ
V
SSQ
NC
Input /
Output
Supply
Supply
Supply
Supply
-
Etron Confidential
4
Rev. 1.0
Apr. 2009