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EM669325BG-1H/LG 参数 Datasheet PDF下载

EM669325BG-1H/LG图片预览
型号: EM669325BG-1H/LG
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×32低功耗SDRAM ( LPSDRAM ) [4M x 32 Low Power SDRAM (LPSDRAM)]
分类和应用: 动态存储器
文件页数/大小: 51 页 / 598 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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Et r on Tech  
EM669325  
4M x 32 LPSDRAM  
9
No-Operation command  
(RAS# = "H", CAS# = "H", WE# = "H")  
The No-Operation command is used to perform a NOP to the SDRAM which is selected (CS#  
is Low). This prevents unwanted commands from being registered during idle or wait states.  
10 Burst Stop command  
(RAS# = "H", CAS# = "H", WE# = "L")  
The Burst Stop command is used to terminate either fixed-length or full-page bursts. This  
command is only effective in a read/write burst without the auto precharge function. The terminated  
read burst ends after a delay equal to the CAS# latency (refer to the following figure). The  
termination of a write burst is shown in the following figure.  
T0  
T 1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
READ A  
NOP  
NOP  
NOP  
COMMAND  
NOP  
NOP  
Burst Stop  
DOUT A  
NOP  
NOP  
Theburst ends after a delay equal totheCAS# latency.  
CAS# latency=2  
DOUT A  
DOUT A  
DOUT A  
3
0
1
2
t
, DQ's  
CK2  
CAS# latency=3  
, DQ's  
DOUT A  
DOUT A  
DOUT A  
DOUT A  
3
0
1
2
t
CK3  
Termination of a Burst Read Operation (Burst Length  
4, CAS# Latency = 2, 3)  
T0  
T 1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
NOP  
NOP  
NOP  
COMMAND  
NOP  
WRITE A  
NOP  
Burst Stop  
don't care  
NOP  
NOP  
CAS# latency= 2, 3  
DQ's  
DIN A  
DIN A  
0
DIN A  
1
2
Input data for the Write is masked.  
Termination of a Burst Write Operation (Burst Length = X, CAS# Latency = 1, 2, 3)  
Preliminary  
13  
Rev 0.6  
Sep. 2003