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EM63A165TS-6G 参数 Datasheet PDF下载

EM63A165TS-6G图片预览
型号: EM63A165TS-6G
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mega ×16同步DRAM (SDRAM)的 [16Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 73 页 / 1390 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM63A165  
Write Enable: The WE# signal defines the operation commands in conjunction  
with the RAS# and CAS# signals and is latched at the positive edges of CLK. The  
WE# input is used to select the BankActivate or Precharge command and Read  
or Write command.  
WE#  
Input  
LDQM,  
UDQM  
Input  
Data Input/Output Mask: Controls output buffers in read mode and masks  
Input data in write mode.  
DQ0-DQ15  
Input /  
Output  
Data I/O: The DQ0-15 input and output data are synchronized with the positive  
edges of CLK. The I/Os are maskable during Reads and Writes.  
NC/RFU  
VDDQ  
-
No Connect: These pins should be left unconnected.  
Supply  
DQ Power: Provide isolated power to DQs for improved noise immunity.  
( 3.3V± 0.3V )  
VSSQ  
Supply  
DQ Ground: Provide isolated ground to DQs for improved noise immunity.  
( 0 V )  
VDD  
VSS  
Supply  
Supply  
Power Supply: +3.3V ± 0.3V  
Ground  
4
Rev 1.1 Apr. 2007  
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