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EM63A165 参数 Datasheet PDF下载

EM63A165图片预览
型号: EM63A165
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mega ×16同步DRAM (SDRAM)的 [16Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器
文件页数/大小: 73 页 / 1390 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM63A165  
Data 5 A8  
A0#  
A7  
A7  
A7  
A6  
A6  
A6  
A5  
A5  
A5  
A4  
A4  
A4  
A3  
A3  
A3  
A2#  
A2#  
A2#  
A1  
Data 6 A8  
A0  
A1#  
A1#  
Data 7 A8  
A0#  
CAS# Latency Field (A6~A4)  
This field specifies the number of clock cycles from the assertion of the Read command to the first  
read data. The minimum whole value of CAS# Latency depends on the frequency of CLK. The  
minimum whole value satisfying the following formula must be programmed into this field.  
tCAC(min) CAS# Latency X tCK  
A6  
0
A5  
0
A4  
0
CAS# Latency  
Reserved  
Reserved  
2 clocks  
0
0
1
0
1
0
0
1
1
3 clocks  
1
X
X
Reserved  
Write Burst Length (A9)  
This bit is used to select the burst write length.  
A9  
0
Write Burst Length  
Burst  
1
Single Bit  
9
No-Operation command  
(RAS# = "H", CAS# = "H", WE# = "H")  
The No-Operation command is used to perform a NOP to the SDRAM which is selected (CS#  
is Low). This prevents unwanted commands from being registered during idle or wait states.  
14  
Rev 1.1 Apr. 2007  
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