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EM639165TS-75L 参数 Datasheet PDF下载

EM639165TS-75L图片预览
型号: EM639165TS-75L
PDF下载: 下载PDF文件 查看货源
内容描述: 8Mega X 16位SDRAM [8Mega x 16bits SDRAM]
分类和应用: 动态存储器
文件页数/大小: 48 页 / 655 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM639165
PIN FUNCTION
CLK
Input
Master Clock:
All other inputs are referenced to the rising edge of CLK
Clock Enable:
CKE controls internal clock.When CKE is low, internal clock for
the following cycle is ceased. CKE is also used to select
auto / self-refresh.
After self-refresh mode is started, CKE becomes asynchronous input.
Self-refresh is maintained as long as CKE is low.
Chip Select:
When /CS is high, any command means No Operation.
Combination of /RAS, /CAS, /WE defines basic commands.
A0-11 specify the Row / Column Address in conjunction with BA0,1.
The Row Address is specified by A0-11.
The Column Address is specified byA0-8.
A10 is also used to indicate precharge option. When A10 is high at a
read / write command, an auto precharge is performed. When A10 is
high at a precharge command, all banks are precharged.
Bank Address:
BA0,1 specifies one of four banks to which a command is applied.
BA0,1 must be set with ACT, PRE , READ , WRITE commands.
CKE
Input
/CS
/RAS, /CAS, /WE
Input
Input
A0-11
Input
BA0,1
Input
DQ0-15
Input / Output
Data In and Data out are referenced to the rising edge of CLK.
Din Mask / Output Disable:
When DQM(U/L) is high in burst write, Din for the current cycle is
masked. When DQM(U/L) is high in burst read,
Dout is disabled at the next but one cycle.
Power Supply for the memory array and peripheral circuitry.
DQMU/L
Input
VDD,VSS
VDDQ,VSSQ
Power Supply
Power Supply
VDDQ and VSSQ are supplied to the Output Buffers only.
Preliminary
3
Rev 1.0
Feb. 2001