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EM638165TS-7IG 参数 Datasheet PDF下载

EM638165TS-7IG图片预览
型号: EM638165TS-7IG
PDF下载: 下载PDF文件 查看货源
内容描述: [4M x 16 bit Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 53 页 / 517 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM638165  
EtronTech  
Figure 24. Self Refresh Entry & Exit Cycle  
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19  
CLK  
CKE  
*Note 2  
*Note 8  
tXSR  
*Note 5  
*Note 1  
*Note 3,4  
tPDE  
tIS  
tIH  
*Note 6  
tIS  
*Note 7  
CS#  
RAS#  
CAS#  
WE#  
*Note 9  
BA0,1  
A10  
A0-A9,  
A11  
DQM  
DQ  
Hi-Z  
Hi-Z  
Self Refresh Exit  
Auto Refresh  
Self Refresh Entry  
Don’t Care  
Note: To Enter SelfRefresh Mode  
1. CS#, RAS# & CAS# with CKE should be low at the same clock cycle.  
2. After 1 clock cycle, all the inputs including the system clock can be don't care except for CKE.  
3. The device remains in SelfRefresh mode as long as CKE stays "low".  
4. Once the device enters SelfRefresh mode, minimum tRAS is required before exit from SelfRefresh.  
To Exit SelfRefresh Mode  
5. System clock restart and be stable before returning CKE high.  
6. Enable CKE and CKE should be set high for valid setup time and hold time.  
7. CS# starts from high.  
8. Minimum tXSR is required after CKE going high to complete SelfRefresh exit.  
9. 4096 cycles of burst AutoRefresh is required before SelfRefresh entry and after SelfRefresh exit if the  
system uses burst refresh.  
Rev. 5.2  
25  
Rev. 5.2  
Dec. /2013  
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