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EM636327JT-8 参数 Datasheet PDF下载

EM636327JT-8图片预览
型号: EM636327JT-8
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32高速同步图形DRAM ( SGRAM ) [512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)]
分类和应用: 动态存储器
文件页数/大小: 78 页 / 1387 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM636327  
Figure 5. Self Refresh Entry & Exit Cycle  
T6  
T0  
T1  
T2  
T3  
T4  
T5  
T7  
T8  
T9  
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19  
Clock  
CKE  
CS#  
*Note 2  
tRC(min) *Note 7  
*Note 4  
*Note 1  
*Note 3  
tPDE  
tSRX  
*Note 5  
tIS  
*Note 6  
RAS#  
CAS#  
BS  
*Note 8  
*Note 8  
A0-A9  
WE#  
DSF  
DQM  
Hi-Z  
Hi-Z  
DQ  
Self Refresh Enter  
SelfRefreshExit  
AutoRefresh  
Note: To Enter SelfRefresh Mode  
1. CS#, RAS# & CAS# with CKE should be low at the same clock cycle.  
2. After 1 clock cycle, all the inputs including the system clock can be don't care except for CKE.  
3. The device remains in SelfRefresh mode as long as CKE stays "low".  
Once the device enters SelfRefresh mode, minimum tRAS is required before exit from SelfRefresh.  
Note: To Exit SelfRefresh Mode  
4. System clock restart and be stable before returning CKE high.  
5. Enable CKE and CKE should be set high for minimum time of tSRX  
.
6. CS# starts from high.  
7. Minimum tRC is required after CKE going high to complete SelfRefresh exit.  
8. 2048 cycles of burst AutoRefresh is required before SelfRefresh entry and after SelfRefresh exit if the  
system uses burst refresh.  
Preliminary  
1998  
December  
28  
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