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EM584161BC-70 参数 Datasheet PDF下载

EM584161BC-70图片预览
型号: EM584161BC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16低功耗SRAM [256K x 16 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 250 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
DC Characteristics (Ta = -40°C to 85°C, VDD = 1.65V to 1.95V)
Symbol
Parameter
Operating current @ min
cycle time
Operating current @ max
cycle time (1µs)
Test Conditions
CE1# = VIL and
CE2 = VIH and
IOUT = 0mA
Other Input = VIH /
VIL
CE1#
VDD -0.2V, or
CE2
0.2V, Others
inputs
0.2V or
VDD -0.2V
IOH = -100
µA
IOL = 100
µA
Min.
Typ.
EM584161
Max.
Unit
IDD1
15
mA
IDD2
ISB
2
mA
Standby current
8
µA
VOH
VOL
Notes:
Output HIGH Voltage
Output LOW Voltage
VDD –
0.2V
0.3
V
V
* Typical value are measured at T
a
= 25°C.
** In standby mode with CE1#
VDD - 0.2V, these limits are assured for the condition
CE2
V
DD
- 0.2V or CE2
0.2V.
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Symbol
CIN
Min
Typ
Max
10
Unit
pF
Test Conditions
VIN = GND
COUT
10
pF
VOUT = GND
Notes:
This parameter is periodically sampled and is not 100% tested.
4
Rev 2.0
Nov. 2003