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EM566169BC-85 参数 Datasheet PDF下载

EM566169BC-85图片预览
型号: EM566169BC-85
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16的SRAM伪 [1M x 16 Pseudo SRAM]
分类和应用: 静态存储器
文件页数/大小: 15 页 / 130 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
AC Test Condition
Output load : 30pF + one TTL gate
Input pulse level : 0.4V, 2.4
Timing measurements : 0.5 x VCC
tR, tF : 5ns
EM566169BC
AC Test Loads
R
L
= 50
D
OUT
Z
0
= 50
Note:
1. Including scope and jig capacitance
C
L
= 30 pF
1
V
L
= 1.5 V
State Diagram
Deep Power Down Exit
Sequence
Deep Power Down Entry
Sequence
CE1# = VIH or VIL,
CE2=VIH
Deep Power
Down Mode
CE2=VIH
CE2=VIL
Power
on
Initial State
(Wait 200µs)
Active
CE1# =VIL,
CE2=VIH,
CE2=VIL
Power Up Sequence
CE2=VIH,
CE1# =VIH
or UB#, LB#
=VIH
Standby
Standby Mode Characteristics
Power Mode
Standby
Deep Power Down
Memory Cell Data
Valid
Invalid
Standby Current (µA)
100
10
Wait Time
0 ns
200 µs
7
Rev 0.6
Apr. 2004