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EM565161BJ-55 参数 Datasheet PDF下载

EM565161BJ-55图片预览
型号: EM565161BJ-55
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×16的低功耗SRAM [512K x 16 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 792 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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Et r on Tech  
EM565161  
Write Cycle4  
(UB#, LB# Controlled)(See Note 4)  
t
W C  
A d d r e s s  
t
t
t
A S  
W P  
W R  
W E #  
C E 1 #  
C E 2  
t
C W  
t
t
C W  
B W  
U B #  
L B #  
,
t
t
W H Z  
B L Z  
D
O U T  
t
L Z  
t
t
D S  
D H  
D
(S e e N o te 5 )  
V A L I D D A T A IN  
I N  
Note:  
1. WE# remains HIGH for the read cycle.  
2. If CE1# goes LOW (or CE2 goes HIGH) with or after WE# goes LOW, the outputs will remain at high  
impedance.  
3. If CE1# goes HIGH (or CE2 goes LOW) coincident with or before WE# goes HIGH, the outputs will remain at  
high impedance.  
4. If OE# is HIGH during the write cycle, the outputs will remain at high impedance.  
5. Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be  
applied.  
Preliminary  
10  
Rev 0.9  
Jan 2002