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EM564166 参数 Datasheet PDF下载

EM564166图片预览
型号: EM564166
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16低功耗SRAM [256K x 16 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 161 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
DC Characteristics (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)
Parameter
Input low current
Output low
voltage
Output high
voltage
Symbol
IIL
VOL
VOH
IIN = 0V to VDD
IOL = 2.1 mA
IOH = -1.0 mA
VDD = 3.6 V
IDD1
Operating current
CE# = VIL and
IOUT = 0mA
Other Input = VIH / VIL
IDD2
IDDS1
Standby current
IDDS2
CE# = VIH
CE#
VDD - 0.2V
VDD = 3.6 V
-70/85
VDD = 2.7 V
VDD = 2.3 V
VDD = 3.6 V
Cycle time
= min
VDD = 2.7 V
VDD = 2.3 V
Cycle time = 1µs
Test Conditions
Min
-1
-
VDD -
0.15
EM564166
Typ*
15
10
7
1
0.8
0.5
5
Max Unit
1
0.4
25
15
mA
12
5
0.5
10
5
3
80
µA
mA
µA
V
V
-70E/85E
Notes:
* Typical value are measured at T
a
= 25°C.
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Symbol
CIN
Min
Typ
Max
10
Unit
pF
Test Conditions
VIN = GND
COUT
10
pF
VOUT = GND
Notes:
This parameter is periodically sampled and is not 100% tested.
Preliminary
4
Rev 1.0
May 2001