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EM564166BC-85 参数 Datasheet PDF下载

EM564166BC-85图片预览
型号: EM564166BC-85
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16低功耗SRAM [256K x 16 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 161 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
Write Cycle3
(UB#, LB# Controlled)(See Note 4)
tW C
EM564166
Address
t AS
tW P
tW R
W E#
t CW
CE#
t BW
UB# , LB#
t BLZ
t W HZ
D O UT
t LZ
t DS
t DH
D IN
(See Note 5)
VALID DATA IN
Note:
1.
2.
3.
4.
5.
WE# remains HIGH for the read cycle.
If CE# goes LOW with or after WE# goes LOW, the outputs will remain at high impedance.
If CE# goes HIGH coincident with or before WE# goes HIGH, the outputs will remain at high impedance.
If OE# is HIGH during the write cycle, the outputs will remain at high impedance.
Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be
applied.
Preliminary
9
Rev 1.0
May 2001