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EM564081BC-70 参数 Datasheet PDF下载

EM564081BC-70图片预览
型号: EM564081BC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8低功耗SRAM [512K x 8 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 291 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
Write Cycle 3
(CE2 Controlled)(See Note 4)
tW C
EM564081
Address
t AS
tW P
tW R
WE#
t CW
CE1#
CE2
t CW
t WHZ
D OUT
t LZ
t DS
t DH
D IN
(See Note 5)
VALID DATA IN
Note:
1. WE# remains HIGH for the read cycle.
2. If CE1# goes LOW (or CE2 goes HIGH) with or after WE# goes LOW, the outputs will remain at high
impedance.
3. If CE1# goes HIGH (or CE2 goes LOW) coincident with or before WE# goes HIGH, the outputs will remain
at high impedance.
4. If OE# is HIGH during the write cycle, the outputs will remain at high impedance.
5. Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be
applied.
Preliminary
9
Rev 0.7
January 2001