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EM562081BC-70 参数 Datasheet PDF下载

EM562081BC-70图片预览
型号: EM562081BC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8低功耗SRAM [256K x 8 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 115 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
DC Characteristics (Ta = -40° C to 85° C, VDD = 2.7V to 3.6V)
Parameter
Input low current
Output low voltage
Output high
voltage
Symbol
IIL
VOL
VOH
IDD1
Operating current
IDD2
IDDS1
Standby current
IIN = 0V to VDD
IOL = 2.1 mA
IOH = -1.0 mA
VDD = 3.6 V , CE1# = VIL and
CE2 = VIH and IOUT = 0mA
Other Input = VIH / VIL
CE1# = VIH or CE2 = VIL
Cycle time = min
Cycle time = 1µs
Test Conditions
EM562081
Min
-1
-
2.2
Typ*
10
1
Max Unit
1
0.4
25
mA
5
0.5
10
mA
µA
µA
V
V
IDDS2
**
CE1#
VDD – 0.2V or CE2
0.2V,
(Note)
Notes:
* Typical value are measured at T
a
= 25°C, and not 100% tested.
** In standby mode with CE1#
VDD - 0.2V, these limits are assured for the condition
CE2
V
DD
- 0.2V or CE2
0.2V.
Capacitance (Ta = 25° C; f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Symbol
CIN
Min
Typ
Max
10
Unit
pF
Test Conditions
VIN = GND
COUT
10
pF
VOUT = GND
Notes:
This parameter is periodically sampled and is not 100% tested.
Preliminary
4
Rev 1.0
July 2001