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MUN2112RT1 参数 Datasheet PDF下载

MUN2112RT1图片预览
型号: MUN2112RT1
PDF下载: 下载PDF文件 查看货源
内容描述: 偏置电阻晶体管 [Bias Resistor Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 7 页 / 282 K
品牌: ETL [ E-TECH ELECTRONICS LTD ]
 浏览型号MUN2112RT1的Datasheet PDF文件第1页浏览型号MUN2112RT1的Datasheet PDF文件第3页浏览型号MUN2112RT1的Datasheet PDF文件第4页浏览型号MUN2112RT1的Datasheet PDF文件第5页浏览型号MUN2112RT1的Datasheet PDF文件第6页浏览型号MUN2112RT1的Datasheet PDF文件第7页  
MUN2111RT1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
I
CBO
I
CEO
I
EBO
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
V
CE(sat)
-
-
-
V
OL
-
-
0.2
-
-
-
0.25
0.25
0.25
Vdc
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
100
140
140
250
250
5.0
15
27
140
130
Max
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
-
-
-
-
-
-
-
-
-
-
-
-
-
Vdc
Unit
nAdc
nAdc
mAdc
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
=50V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (I
C
=2.0mA, I
B
=0)
(3)
V
(BR)CBO
V
(BR)CEO
h
FE
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
(3)
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
Collector-Emitter Saturation Voltage (I
C
=10mA, I
E
=0.3mA)
(I
C
= 10 mA, I
B
= 0.3 mA)
MUN2111RT1 MUN2112RT1
MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2130RT1
(I
C
= 10 mA, I
B
= 5.0 mA)
MUN2131RT1
(I
C
= 10 mA, I
B
= 1.0 mA)
MUN2116RT1 MUN2132RT1
MUN2134RT1
Output Voltage (on)
(V
CC
=5.0V,V
B
=2.5V, R
L
=1.0kΩ)
MUN2111RT1
MUN2112RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1
MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1
MUN2134RT1
(V
CC
=5.0V,V
B
=3.5V, R
L
= 1.0kΩ)
MUN2113RT1
-
-
0.2
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
P1–2/7