PNP RF Amplifier Transistor
Surface Mount
COLLECTOR
3
MSA1022–CT1
3
1
2
CASE
318D–03, STYLE1
SC–59
2
BASE
1
EMITTER
MAXIMUM RATINGS
(T
A
= 25 °C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
V
CBO
V
CEO
V
EBO
I
C
Symbol
P
D
T
J
T
stg
Value
–30
–20
–5.0
–30
Max
200
150
-55 ~ +150
Symbo
I
CBO
I
CEO
I
EBO
h
FE
f
T
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C
°C
lMin
—
—
—
110
150
Max
–0.1
–100
–10
220
—
Unit
µAdc
µAdc
µAdc
—
MHz
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Characteristic
Collector Cutoff Current
(V
CB
= –10 Vdc, I
E
= 0)
Collector-Emitter Breakdown Voltage
(V
CE
= –20 Vdc, I
B
= 0)
Emitter-Base Breakdown Voltage
(V
EB
= –5.0 Vdc, I
C
= 0)
DC Current Gain (1)
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc)
Current-Gain - Bandwidth Product
(V
CB
= –10 Vdc, I
E
= 1.0 mAdc)
1. Pulse Test: Pulse Width < 300
µs,
D.C. < 2%.
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C)
DEVICE MARKING
Marking Symbol
ECX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N1–1/1
ETL [ E-TECH ELECTRONICS LTD ]
