Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency
UHF and VHF detector applications. Readily available to many other fast
switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance — 1.0 pF @ 20 V
• Low Reverse Leakage — 200 nA (max)
• High Reverse Voltage — 70 Volts (min)
• Available in 8 mm Tape and Reel
• Device Marking: 5H
1
MMDL770T1
1.0 pF SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
MAXIMUM RATINGS
Symbol
V
R
Rating
Reverse Voltage
Value
70
Unit
Vdc
PLASTIC SOD– 323
CASE 477
THERMAL CHARACTERISTICS
Symbol
P
D
Characteristic
Total Device Dissipation FR–5 Board,*
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
Max
200
1.57
635
–55 to+150
Unit
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
*FR–5 Minimum Pad
ORDERING INFORMATION
Device
MMDL770T1
Package
SOD–323
Shipping
3000 / Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
µA)
Diode Capacitance
(V
R
= 20 Volts, f = 1.0 MHz)
Reverse Leakage
(V
R
= 35 V)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mA)
Symbol
V
(BR)R
C
T
I
R
Min
70
—
—
Typ
—
0.5
9.0
Max
—
1.0
200
Unit
Volts
pF
nAdc
V
F
—
0.7
1.0
Vdc
S4–1/3
ETL [ E-TECH ELECTRONICS LTD ]
