MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
TYPICAL DEVICE CHARACTERISTICS
1000
500
T
A = 25°C
f = 1.0 MHz
MV2115
200
100
50
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
100
50
1.040
T
A = 125°C
V
R = 2.0Vdc
20
1.030
1.020
1.010
1.000
0.990
0.980
0.970
0.960
10
5.0
V
R = 4.0Vdc
2.0
T
T
A = 75°C
A = 25°C
1.0
.50
V
R = 30Vdc
.20
NORMALIZED TO CT
at T A = 25°C
.10
.05
.02
.01
V
R = (CURVE)
0
5.0
10
15
20
25
30
–75
–50
–25
0
+25
+50
+75
+100 +125
TJ , JUNCTIONTEMPERATURE(°C)
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Normalized Diode Capacitance
versus Junction Temperature
Figure 3. Reverse Current versus
Reverse Bias Voltage
5000
5000
MMBV2101LT1/MV2101
3000
2000
3000
2000
MMBV2109LT1/MV2109
1000
1000
500
300
200
MMBV2101LT1/MV2101
500
300
200
MV2115
100
100
50
MV2115
MMBV2109LT1/MV2109
50
T
A = 25°C
T
V
A = 25°C
30
20
30
20
f = 50 MHz
R = 4.0 Vdc
10
10
10
20
30
50
70
100
200
300
1.0
2.0
3.0
5.0
7.0
10
20 30
f, FREQUENCY (MHz)
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Figure of Merit versus
Reverse Voltage
Figure 5. Figure of Merit versus
Frequency
I6–3/3
ETL [ E-TECH ELECTRONICS LTD ]
