MC74VHC1GT66
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V CC
V IN
V IS
I IK
DC Supply Voltage
– 0.5 to + 7.0
– 0.5 to +7.0
–0.5 to +7.0
–20
DC Input Voltage
V
Analog Output Voltage
Input Diode Current
V
mA
mA
mW
I CC
P D
DC Supply Current, V CC and GND
Power dissipation in still air
+25
SC–88A (Note 2.)
TSOP5 (Note 2.)
200
450
T L
Lead Temperature, 1 mm from Case for 10 s
Storage temperature
260
°C
°C
V
T stg
V ESD
–65 to +150
>2000
> 200
ESD Withstand Voltage
Human Body Model (Note 3)
Machine Model (Note 4)
Charged Device Model (Note 5)
N/A
I LATCH–UP
Latch–Up Performance Above V CC and Below GND at 125°C (Note 6)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
eyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not
implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Derating – SC–88A Package: –3 mW/°C from 65°C to 125°C
– TSOP5 Package: –6 mW/°C from 65°C to 125°C
3. Tested to EIA/JESD22–A114–A
4. Tested to EIA/JESD22–A115–A
5. Tested to JESD22–C101–A
6. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
V CC
V IN
Parameter
Min
2.0
Max
5.5
Unit
V
DC Supply Voltage
DC Input Voltage
GND
GND
– 55
0
5.5
V
V IS
Analog Input Voltage
V CC
+ 125
100
20
V
T A
Operating Temperature Range
Input Rise and Fall Time
°C
ns/V
t r ,t f
V CC = 3.3 ± 0.3 V
V CC = 5.0 ± 0.5 V
0
The θ JA of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the
table and figure below.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Hours
Time,
Years
117.8
47.9
20.4
9.4
Temperature °C
80
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
90
100
110
120
130
140
1
4.2
2.0
1
10
100
1000
1.0
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
VHT66–2/6
ETL [ E-TECH ELECTRONICS LTD ]
