MBD110DWT1 MBD330DWT1 MBD770DWT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
µA)
MBD110DWT1
MBD330DWT1
MBD770DWT1
C
T
MBD110DWT1
C
T
MBD330DWT1
MBD770DWT1
I
R
MBD110DWT1
MBD330DWT1
MBD770DWT1
NF
MBD110DWT1
V
F
MBD110DWT1
MBD330DWT1
MBD770DWT1
—
—
—
—
—
0.5
0.38
0.52
0.42
0.7
0.6
0.45
0.6
0.5
1.0
—
6.0
—
Vdc
—
—
—
0.02
13
9.0
0.25
200
200
µA
nAdc
nAdc
dB
—
—
0.9
0.5
1.5
1.0
—
0.88
1.0
pF
Symbol
V
(BR)R
Min
7.0
30
70
Typ
10
—
—
Max
—
—
—
pF
Unit
Volts
Diode Capacitance
(V
R
= 0, f = 1.0 MHz, Note 1)
Total Capacitance
(V
R
= 15 Volts, f = 1.0 MHz)
(V
R
= 20 Volts, f = 1.0 MHz)
Reverse Leakage
(V
R
= 3.0 V)
(V
R
= 25 V)
(V
R
= 35 V)
Noise Figure
(f = 1.0 GHz, Note 2)
Forward Voltage
(I
F
= 10 mA)
(I
F
= 1.0 mAdc)
(I
F
= 10 mA)
(I
F
= 1.0 mAdc)
(I
F
= 10 mA)
MBD110–2/5