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BC858CDW1T1 参数 Datasheet PDF下载

BC858CDW1T1图片预览
型号: BC858CDW1T1
PDF下载: 下载PDF文件 查看货源
内容描述: 双路通用晶体管 [Dual General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 469 K
品牌: ETL [ E-TECH ELECTRONICS LTD ]
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BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
Min
Typ
Max
Unit
V
–65
–45
–30
V
(BR)CES
–80
–50
–30
V
(BR)CBO
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
BC856 Series
BC857 Series
BC858 Series
Collector–Emitter Breakdown Voltage
(I
C
= –10
µA,
V
EB
= 0)
BC856 Series
BC857 Series
BC858 Series
(BR)CEO
V
V
V
–15
–4.0
nA
µA
Collector–Base Breakdown Voltage
(I
C
= –10
µA)
BC856 Series
BC857 Series
BC858 Series
Emitter–Base Breakdown Voltage
(I
E
= –1.0
µA)
BC856 Series
BC857 Series
Collector Cutoff Current
BC858 Series
(V
CB
= –30 V)
(V
CB
= –30 V, T
A
= 150°C)
–80
–50
–30
V
(BR)EBO
–5.0
–5.0
I
CBO
–5.0
ON CHARACTERISTICS
DC Current Gain
(I
C
= –10
µA,
V
CE
= –5.0 V)
h
FE
BC856B, BC857B, BC858B
BC857C, BC858C
220
420
–0.6
150
270
290
520
–0.7
–0.9
––
475
800
–0.3
–0.65
–0.75
–0.82
V
V
V
(I
C
= –2.0 mA, V
CE
=– 5.0 V) BC856B, BC857B, BC858B
BC857C, BC858C
Collector–Emitter Saturation Voltage (I
C
= -10 mA, I
B
= -0.5 mA) V
CE(sat)
Collector–Emitter Saturation Voltage
( I
C
= -100 mA, I
B
= -5.0 mA)
Base–Emitter Saturation Voltage (I
C
= –10 mA, I
B
= –0.5 mA) V
BE(sat)
Base–Emitter Saturation Voltage
(I
C
= –100 mA, I
B
= –5.0 mA)
Base–Emitter Voltage (I
C
= –2.0 mA, V
CE
= –5.0 V)
Base–Emitter Voltage
(I
C
= –10 mA, V
CE
= –5.0 V)
V
BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= –10 mA, V
CE
= –5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= –10 V, f = 1.0 MHz)
Noise Figure (I
C
= –0.2 mA,
V
CE
= –5.0 V
dc
, R
S
= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
f
T
C
obo
NF
100
4.5
10
MHz
pF
dB
BC856b–2/5