Dual Series Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward
voltage reduces conduction loss. Miniature surface mount package is excellent
for hand held and portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I
F
= 10 mAdc
BAT54RSLT1
30 VOLTS
DUAL HOT- CARRIER
DETECTOR AND
SWITCHING
DIODES
1
ANODE
3
CAHODE/ANODE
2
CATHODE
3
1
2
CASE 318–08, STYLE 11
DEVICE MARKING
BAT54S = LD3
SOT–23 (TO–236AB)
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating Junction
Temperature Range
Storage Temperature Range
T
stg
Symbol
V
R
P
F
Value
30
225
1.8
Unit
Volts
mW
mW/°C
°C
°C
T
J
–55 to +125
–55 to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) ( EACH DIODE )
Characteristic
Reverse Breakdown Voltage (I
R
= 10
µA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) Figure 1
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
t
rr
V
F
V
F
Min
30
—
—
—
—
—
—
—
—
Typ
—
7.6
0.5
0.22
0.41
0.52
—
0.29
0.35
Max
—
10
2.0
0.24
0.5
1.0
5.0
0.32
0.40
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
G12–1/1
ETL [ E-TECH ELECTRONICS LTD ]
