2N60
Derate above 25℃
Junction Temperature
Storage Temperature
＊
0.44
T
J
T
STG
0.19
+150
-55~+150
0.35
W/℃
℃
℃
Drain current limited by maximum junction temperature.
■
Thermal Characteristics
Parameter
Thermal Resistance Junction-Ambient
Symbol
TO-220
R
thJA
R
thCS
R
thJC
0.5
2.32
62.5
--
5.5
Ratings
TO-220F
TO-251
＊
Units
TO-252
50
（110）
--
2.87
℃/W
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance Junction-Case
■
Electrical Characteristics
（T
J
=25℃,unless Otherwise specified.）
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Current
Forward
BV
DSS
I
DSS
V
GS
=0V,I
D
=250µA
V
DS
=600V,V
GS
=0V
V
DS
=480V,T
C
=125℃
I
GSS
△BV
DSS
/△T
J
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250µA
600
--
--
--
--
--
--
--
--
--
--
0.7
--
1
10
100
-100
--
V
µA
µA
nA
nA
V/℃
Symbol
Test Conditions
Min
Typ
Max
Units
Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
V
GS(TH)
R
DS(ON)
V
DS
=V
GS
, I
D
=250µA
V
DS
=10V,
I
D
=1.0A(TO220,TO220F)
I
D
=0.95A(TO251,TO252)
2.0
--
--
4.1
4.0
5.0
V
C
ISS
C
OSS
C
RSS
V
DS
=25V,V
GS
=0V,
f=1MH
Z
--
--
--
200
20
4
--
--
--
pF
pF
pF
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
GS
=0V,
I
SD
=2.0A(TO220,TO220F)
I
SD
=0.95A(TO251,TO252)
TO-220,TO-220F
TO-251, TO-252
V
DS
=480V, I
D
=2.0A
V
GS
=10V
(Note 4, 5)
--
V
DD
=300V,I
D
=2.0A,
R
G
=25
(Note 4, 5)
10
25
25
30
9
1.5
4.0
--
--
--
--
--
--
--
ns
ns
ns
ns
nC
nC
nC
--
--
--
--
--
--
V
SD
--
--
--
--
--
--
--
--
--
--
--
230
1.0
1.4
2.0
1.9
8.0
7.6
--
--
V
Continuous Drain-Source Current
I
SD
A
Pulsed Drain-Source Current
Reverse Recovery Time
Reverse Recovery Charge
I
SM
t
RR
Q
RR
TO-220,TO-220F
TO-251, TO-252
I
SD
=2.0A,
dI
SD
/dt=100A/µs
(Note 4)
A
ns
µC
--
1. Repetitive Rating : Pulse width limited by maxim um junction temperature
2. L = 60 mH, I
AS
= 2.0 A, V
DD
= 50V, R
G
= 25
Ω,
Starting TJ = 25°C
3. I
SD
≤
2.0 A, di/dt
≤
200A/μs, V
DD
≤BV
DSS
, Starting TJ = 25°C
2
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