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M52S128168A-7.5BG 参数 Datasheet PDF下载

M52S128168A-7.5BG图片预览
型号: M52S128168A-7.5BG
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行同步DRAM [1M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 47 页 / 1192 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
Preliminary  
M52S128168A  
COMMANDS  
Mode register set command  
(CS ,RAS ,CAS , WE , BA1, BA0 = Low)  
The DRAM has a mode register that defines how the device operates. In this  
command, A0 through A11, BA0 and BA1 are the data input pins. After power on, the  
mode register set command must be executed to initialize the device.  
The mode register can be set only when all banks are in idle state. During 2CLK  
(tMRD) following this command, the DRAM cannot accept any other commands.  
Extended Mode register set command  
( CS ,RAS , CAS , WE , BA0 = Low ; BA1= High)  
The DRAM has a extended mode register that defines how to set PASR, TCSR,  
DS.  
Activate command  
( CS ,RAS = Low, CAS , WE = High)  
The DRAM has four banks, each with 4,096 rows.  
This command activates the bank selected by BA1 and BA0 (BS) and a row  
address selected by A0 through A11.  
This command corresponds to a conventional DRAM’s RAS falling.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: May. 2007  
Revision: 1.0  
15/47  
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