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M52D16161A-10BIG 参数 Datasheet PDF下载

M52D16161A-10BIG图片预览
型号: M52D16161A-10BIG
PDF下载: 下载PDF文件 查看货源
内容描述: 512K X 16Bit的X 2Banks手机同步DRAM [512K x 16Bit x 2Banks Mobile Synchronous DRAM]
分类和应用: 动态存储器手机
文件页数/大小: 32 页 / 888 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Mode Register
BA
x
0
A10
x
0
A9
1
0
A8
0
0
A7
0
0
A6
A5 A4
LTMODE
LTMODE
A3
WT
WT
A2
A1 A0
BL
BL
M52D16161A
Operation Temperature Condition -40
°
C~85
°
C
Address bus
Burst Read and Single Write (for Write
Through Cache)
Mode Register Set
x =Don’t care
A2-A0
000
001
010
011
100
101
110
111
0
1
WT=0
1
2
4
8
R
R
R
Full page
Sequential
Interleave
WT=1
1
2
4
8
R
R
R
R
Burst length
Wrap type
Latency mode
A6-A4
000
001
010
011
100
101
110
111
Mode Register Write Timing
CAS Latency
R
R
2
3
R
R
R
R
Remark R: Reserved
CLOCK
CKE
CS
RAS
CAS
WE
A0-A10,BA
Mode Register Write
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Sep. 2009
Revision
:
1.1
7/32