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M52D128168A-10TIG 参数 Datasheet PDF下载

M52D128168A-10TIG图片预览
型号: M52D128168A-10TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 47 页 / 1134 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M52D128168A  
Operation Temperature Condition -40°C~85°C  
Write interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length = Full page  
*Note : 1. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by  
AC parameter of tRDL.  
DQM at write interrupted by precharge command is needed to prevent invalid write.  
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input  
data after Row precharge cycle will be masked internally.  
2. Burst stop is valid at every burst length.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Sep. 2008  
Revision: 1.0 40/47  
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